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SI7252ADP-T1-GE3

Part No SI7252ADP-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description DUAL N-CHANNEL 100-V (D-S) MOSFE / Mosfet Array 100V 9.3A (Ta), 28.7A (Tc) 3.6W (Ta), 33.8W (Tc) Surface Mount PowerPAK® SO-8 Dual
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9.3A (Ta) , 28.7A (Tc)
Rds On (Max) @ Id, Vgs 18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1266pF @ 50V
Power - Max 3.6W (Ta) , 33.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SI7252
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1336936-SI7252ADP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI7252ADP-T1-GE3 CAD Model

Description

The Vishay Siliconix SI7252ADP-T1-GE3 MOSFET array is a discrete semiconductor product.

  • Vdss: 100V
  • Power: 3.6W (Ta) or 33.8W (Tc)
  • Technology: MOSFET (Metal Oxide)
  • Configuration: 2 N-Channel (Dual)
  • Packaging: Tape & Reel
  • Standard Package: 3000
  • Temperature Range: -55°C to 150°C (TJ)
  • Gate Charge (Qg): 26.5nC @ 10V
  • MSL Level: 1 (unlimited)
  • HTSUS: 8541.29.0095
  • Manufacturer: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5825 $55.3875
80+ $1.2985 $103.8800
120+ $1.2579 $150.9480
165+ $1.2173 $200.8545
215+ $1.1768 $253.0120
285+ $1.0550 $300.6750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,136 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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