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SI7252ADP-T1-GE3

Name: SI7252ADP-T1-GE3
Brand: Vishay
SKU: 1336936
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	SI7252ADP-T1-GE3
Manufacturer	Vishay
Catalog	FETs - Arrays
Description	DUAL N-CHANNEL 100-V (D-S) MOSFE / Mosfet Array 100V 9.3A (Ta), 28.7A (Tc) 3.6W (Ta), 33.8W (Tc) Surface Mount PowerPAK® SO-8 Dual
Datasheet	SI7252ADP-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	9.3A (Ta) , 28.7A (Tc)
Rds On (Max) @ Id, Vgs	18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1266pF @ 50V
Power - Max	3.6W (Ta) , 33.8W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual
Base Product Number	SI7252
Standard Package	3,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1336936-SI7252ADP-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SI7252ADP-T1-GE3 CAD Model

Description

The Vishay Siliconix SI7252ADP-T1-GE3 MOSFET array is a discrete semiconductor product.

Vdss: 100V
Power: 3.6W (Ta) or 33.8W (Tc)
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Packaging: Tape & Reel
Standard Package: 3000
Temperature Range: -55°C to 150°C (TJ)
Gate Charge (Qg): 26.5nC @ 10V
MSL Level: 1 (unlimited)
HTSUS: 8541.29.0095
Manufacturer: Vishay Siliconix

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
35+	$1.5825	$55.3875
80+	$1.2985	$103.8800
120+	$1.2579	$150.9480
165+	$1.2173	$200.8545
215+	$1.1768	$253.0120
285+	$1.0550	$300.6750

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 18,136 pieces

MOQ: 35 pcs

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