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Same model may have multiple batches, images only for reference.
SI5915DC-E3 Vishay
Same model may have multiple batches, images only for reference.

SI5915DC-E3

Part No SI5915DC-E3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2P-CH 8V 3.4A 1206-8
Datasheet
SI5915DC-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Manufacturer Vishay
Series TrenchFET
Packaging Reel(TR)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 3.4A
Rds On (Max) @ Id, Vgs 70 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Gate Charge (Qg) @ Vgs 9nC @ 4.5V
Power - Max 1.1W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SMD, Flat Lead
Manufacturer Device Package 1206-8 ChipFET
Win Source Part Number 190047-SI5915DC-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5915DC-E3 CAD Model

Description

The Vishay 190047-SI5915DC-E3 is a dual P-channel FET from the TrenchFET series. It has a medium popularity and a balanced supply and demand status.

  • Mounting Styles: SMD/SMT
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SMD, Flat Lead
  • Manufacturer Device Package: 1206-8 ChipFET
  • Drain to Source Voltage (Vdss): 8V
  • Continuous Drain Current (Id): 3.4A
  • Maximum Rds On @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V
  • Gate Charge (Qg) @ Vgs: 9nC @ 4.5V
  • Gate Type: Logic Level Gate FET

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