The FDS6982 is a high-performance, dual N-Channel PowerTrench® MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is tailored for power management applications, offering a compact and efficient solution for a variety of electronic circuits.
Featuring advanced PowerTrench technology, the FDS6982 provides exceptionally low on-resistance and gate charge, leading to a significant reduction in conduction and switching losses. This makes it an ideal choice for high-efficiency power supplies, DC-DC converters, and power management tasks within computing and telecommunications equipment.
The device is encapsulated in a space-saving SO-8 package, allowing for high-density power designs. Its dual independent N-Channel configuration facilitates the creation of half-bridge or synchronous buck converter topologies, streamlining the design process for engineers.
Key Features:
- Low On-Resistance: Minimizes conductive losses, enhancing overall energy efficiency.
- Low Gate Charge: Reduces switching losses, which is crucial for high-frequency applications.
- High Performance: PowerTrench technology ensures superior thermal and electrical performance.
- Versatile: Suitable for a wide range of applications, including power supply, computing, and telecommunications circuits.
- Compact Design: The SO-8 package is ideal for space-constrained applications.
Specifications:
| Parameter |
Value |
| Drain-to-Source Voltage (VDS) |
30V |
| Continuous Drain Current (ID) |
7.5A |
| Power Dissipation (PD) |
2.5W |
| RDS(ON) |
25 mΩ @ VGS = 10V |
In summary, the FDS6982 from ON Semiconductor is a robust and reliable component that enhances the performance of power management systems. Its integration of cutting-edge technology with practical design considerations makes it a go-to choice for designers seeking to optimize their power circuits for efficiency and space.