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Same model may have multiple batches, images only for reference.
SI4634DY-TI-E3 Vishay
Same model may have multiple batches, images only for reference.

SI4634DY-TI-E3

Part No SI4634DY-TI-E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 30V 24.5A 8-SOIC
Datasheet
SI4634DY-TI-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Vishay
Series TrenchFET
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 24.5A (Tc)
Rds On (Max) @ Id, Vgs 5.2 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250μA
Gate Charge (Qg) @ Vgs 68nC @ 10V
Input Capacitance (Ciss) @ Vds 3150pF @ 15V
Power - Max 5.7W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package 8-SO
Win Source Part Number 189932-SI4634DY-TI-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4634DY-TI-E3 CAD Model

Description

The Vishay SI4634DY-TI-E3 is a TrenchFET series MOSFET N-channel, metal oxide device with a maximum drain-to-source voltage of 30V.

  • Maximum drain-to-source voltage: 30V
  • Maximum continuous drain current: 24.5A (Tc)
  • Maximum on-state resistance: 5.2mOhm @ 15A, 10V
  • Maximum gate threshold voltage: 2.6V @ 250μA
  • Gate charge: 68nC @ 10V
  • Input capacitance: 3150pF @ 15V
  • Maximum power: 5.7W
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Suitable for use in: discrete semiconductor products

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