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Same model may have multiple batches, images only for reference.
SI4486EY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4486EY-T1-GE3

Part No SI4486EY-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 100V 5.4A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 5.4A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Maximum) at Id, Vgs 25mOhm at 7.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA (Minimum)
Gate Charge (Qg) (Maximum) at Vgs 44nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 1.8W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 726895-SI4486EY-T1-GE3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4486EY-T1-GE3 CAD Model

Description

The SI4486EY-T1-GE3 MOSFET is a high-quality, reliable component that is ideal for use in a wide range of electronic devices from Vishay Siliconix.

  • Vds - Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 5.4A
  • Rds On (Maximum) @ Id, Vgs: 25mOhm @ 7.9A, 10V
  • Package: 8-SO package
  • Packaging: reel - TR
  • Supply and Demand Status: balanced
  • Manufacturer Pack: 2,500 transistors
  • MSL Level: 1 (Unlimited)
  • Gate Charge (Qg) (Maximum) @ Vgs: 44nC @ 10V
  • Gate Source Voltage (Maximum): ±20V

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