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SI3410DV-T1-QE3

Part No SI3410DV-T1-QE3
Manufacturer Vishay
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Categories Uncategorized
Manufacturer Vishay
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 837539-SI3410DV-T1-QE3
Ultra Librarian 3D Model Ultra Librarian SI3410DV-T1-QE3 CAD Model

Description

The SI3410DV-T1-QE3 is a P-Channel 30V MOSFET manufactured by Vishay. This MOSFET is designed for various switching and power management applications, offering low on-resistance and efficient performance.

Applications

  • Load Switching: Used to efficiently switch power to different loads in electronic circuits.
  • Power Management: Suitable for power management in portable devices like smartphones, tablets, and laptops.
  • DC-DC Converters: Employed in DC-DC converters for voltage regulation and power conversion.
  • Battery Protection Circuits: Protects batteries from overcharging, over-discharging, and short circuits.

Features

  • Low On-Resistance: Minimizes conduction losses and improves power efficiency.
  • Fast Switching Speed: Reduces switching losses and enhances dynamic performance.
  • Logic-Level Gate Drive: Simplifies circuit design with direct logic-level signal compatibility.
  • TrenchFET® Technology: Utilizes Vishay's advanced TrenchFET® technology for superior performance.
  • AEC-Q101 Qualified: Suitable for automotive applications due to its high reliability.
  • Halogen-Free: Compliant with environmental standards.

Benefits

  • High Efficiency: Low on-resistance and fast switching speeds result in greater energy efficiency.
  • Reduced Power Dissipation: Minimizes power loss, leading to cooler operation and extended battery life.
  • Simplified Design: Logic-level gate drive simplifies integration with control circuits.
  • Enhanced Reliability: Robust design ensures consistent performance in harsh environments.
  • Environmentally Friendly: Halogen-free construction aligns with environmental responsibility.

Additional Details

The SI3410DV-T1-QE3 is packaged in a PowerPAK® SC-70 package, providing excellent thermal performance in a compact form factor. Key specifications include a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of up to 3.7A, and a typical on-resistance (RDS(on)) of 0.075Ω at a gate-source voltage (VGS) of 4.5V. It is designed for a wide operating temperature range, ensuring reliable performance across diverse applications.

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