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SI1450DH-T1-E3

Part No SI1450DH-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 8V 4.53A SC70-6 / N-Channel 8-V (D-S) MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) at 25°C 4.53A , 6.04A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Maximum) at Id, Vgs 47mOhm at 4A, 4.5V
Vgs(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 7.05nC at 5V
Maximum Vgs ±5V
Input Capacitance (Ciss) (Maximum) at Vds 535pF at 4V
Power Dissipation (Maximum) 1.56W , 2.78W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SC-70-6 (SOT-363)
Manufacturer Package 6-TSSOP, SC-88, SOT-363
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805080-SI1450DH-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI1450DH-T1-E3 CAD Model

Description

The Vishay Siliconix SI1450DH-T1-E3 MOSFET from Vishay Siliconix is a high-quality N-channel FET that provides reliable performance.

  • Drain to Source Voltage (Vdss): 8V
  • Drive Voltage: 1.5V (max Rds on) and 4.5V (min Rds on)
  • Power Dissipation: 1.56W (2.78W Tc)
  • Maximum Rds on: 47mOhm @ 4A and 4.5V
  • Gate Charge (Qg): 7.05nC @ 5V
  • Input Capacitance (Ciss): 535pF @ 4V
  • Temperature Range: -55°C to 150°C
  • Package: 6-TSSOP, SC-88, SOT-363
  • Features: Halogen-free, RoHS compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1964 $57.9380
720+ $0.1605 $115.5600
1,115+ $0.1559 $173.8285
1,530+ $0.1513 $231.4890
1,985+ $0.1455 $288.8175
2,655+ $0.1305 $346.4775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,200 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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