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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 17A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 180mOhm at 10A, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 66nC at 5V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 1800pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188523-IRL640
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian IRL640 CAD Model

Description

The Vishay Siliconix IRL640 is an N-Channel MOSFET transistor that is designed for use in power management, motor drive, and control applications.

  • Type: N-Channel MOSFET
  • Applications: Power management, motor drive, and control
  • Drain-Source Breakdown Voltage (Maximum): 200V
  • Continuous Drain Current: 17A
  • On-Resistance (Maximum): 180mOhm @ 10A and 5V
  • Gate-Source Voltage (th): 2V @ 250μA
  • Gate Charge (Qg): 66nC @ 5V
  • Gate-Source Voltage (Maximum): ±10V
  • Input Capacitance (Ciss): 1800pF @ 25V
  • Package: TO-220AB
  • Power Dissipation (Maximum): 125W
  • Supply and Demand: Balanced
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7728 $53.1840
70+ $1.4546 $101.8220
110+ $1.4091 $155.0010
150+ $1.3637 $204.5550
190+ $1.3182 $250.4580
255+ $1.1819 $301.3845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 4,850 pieces
MOQ: 30 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

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