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IRL630S

Part No IRL630S
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) | MOSFET N-CH 200V 9A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 9A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 400mOhm at 5.4A, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 40nC at 10V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 1100pF at 25V
Power Dissipation (Maximum) 3.1W, 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188521-IRL630S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL630S CAD Model

Description

The Vishay Siliconix IRL630S is an N-Channel MOSFET transistor with a Vds - Drain-Source Breakdown Voltage of 200V and an Id - Continuous Drain Current of 9A.

  • Vds - Drain-Source Breakdown Voltage: 200V
  • Id - Continuous Drain Current: 9A
  • Mounting Technology: SMD
  • Gate Charge (Qg) (Maximum) @ Vgs: 40nC @ 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 2V @ 250μA
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1100pF @ 25V
  • Component Status: Obsolete
  • Popularity: Medium
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7243 $60.3505
85+ $1.4149 $120.2665
130+ $1.3707 $178.1910
175+ $1.3264 $232.1200
230+ $1.2823 $294.9290
305+ $1.1496 $350.6280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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