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IRFZ34S

Part No IRFZ34S
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 60V 30A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 50mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 46nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 3.7W, 88W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188176-IRFZ34S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ34S CAD Model

Description

The Vishay Siliconix MOSFET is a N-Channel transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 30A.

  • Manufacturer: Vishay Siliconix
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 30A
  • Rds On (Maximum) @ 18A and 10V: 50mOhm
  • Gate-Source Voltage(th) @ 250μA: 4V
  • Gate Charge (Qg) @ 10V: 46nC
  • Gate-Source Voltage (Maximum): ±20V
  • Input Capacitance @ 25V: 1200pF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Application: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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