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IRFZ14S

Name: IRFZ14S
Brand: Vishay
SKU: 605472
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRFZ14S
Manufacturer	Vishay
Catalog	FETs - Single
Description	Advanced Process Technology / Surface Mount (IRFZ14S) \| MOSFET N-CH 60V 10A D2PAK
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	60V
Id - Continuous Drain Current	10A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	200mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	11nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	300pF at 25V
Power Dissipation (Maximum)	3.7W, 43W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1188160-IRFZ14S
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRFZ14S CAD Model

Description

This electronic component is an N-Channel MOSFET from Vishay Siliconix.

Win Source Part Number: 1188160-IRFZ14S
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Category: discrete semiconductor product
Popularity: medium
Supply and Demand Status: balanced
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Operating Temperature Range: -55°C to 175°C
Power Dissipation (maximum): 3.7W, 43W
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 10A
Rds On (Maximum) @ Id, Vgs: 200mOhm @ 6A, 10V
Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) @ Vds: 300pF @ 25V

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