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Same model may have multiple batches, images only for reference.
IRFU9010 Real Image
Same model may have multiple batches, images only for reference.

IRFU9010

Part No IRFU9010
Manufacturer Vishay
Catalog FETs - Single
Description P-CHANNEL POWER MOSFETS | MOSFET P-CH 50V 5.3A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 50V
Id - Continuous Drain Current 5.3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 500mOhm at 2.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 9.1nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 240pF at 25V
Power Dissipation (Maximum) 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-251AA
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188116-IRFU9010
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFU9010 CAD Model

Description

The IRFU9010 is a P-channel MOSFET transistor that is used for various applications such as power supply, motor control, and audio amplifiers.

  • The Vishay Siliconix IRFU9010 is an obsolete product and is available in tube packaging @ Win Source.
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current: 5.3A
  • Maximum Rds On: 500mOhm @ 2.8A and 10V
  • The MOSFET is designed to provide high power dissipation with low input capacitance and gate charge.
  • It is ideal for use in applications such as automotive, industrial, and consumer electronics.

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