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Same model may have multiple batches, images only for reference.
IRLI640G Real Image
Same model may have multiple batches, images only for reference.

IRLI640G

Part No IRLI640G
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A) | MOSFET N-CH 200V 9.9A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 9.9A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 180mOhm at 5.9A, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 66nC at 10V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 1800pF at 25V
Power Dissipation (Maximum) 40W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188556-IRLI640G
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLI640G CAD Model

Description

The IRLI640G is an N-channel MOSFET transistor from Vishay Siliconix.

  • Applications: discrete semiconductor products
  • Supplier Device Package: TO-220-3
  • Maximum Power Dissipation: 40W
  • Vds - Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9.9A
  • Gate Charge (Qg) (Maximum) @ Vgs: 66nC @ 10V

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