The Vishay Siliconix MOSFET is a high-performance semiconductor device that is designed for use in industrial and power management applications. The FET feature of this N-channel transistor polarity component ensures efficient and reliable performance. This device has a maximum drain-source breakdown voltage of 500V and a continuous drain current of 2.4A. The gate-source voltage (th) of 4V @ 250μA ensures that the device is easy to operate. The gate charge (Qg) of 19nC @ 10V ensures that the device is highly responsive. The input capacitance (Ciss) of 360pF @ 25V ensures that the device is highly efficient. This device is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 package and is available in a pack quantity of 75.

• Maximum Drain-Source Breakdown Voltage: 500V
• Continuous Drain Current: 2.4A
• Gate-Source Voltage (th): 4V @ 250μA
• Gate Charge (Qg): 19nC @ 10V
• Input Capacitance (Ciss): 360pF @ 25V