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IRFR1N60A

Part No IRFR1N60A
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A) | MOSFET N-CH 600V 1.4A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 1.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 7Ohm at 840mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 229pF at 25V
Power Dissipation (Maximum) 36W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1187870-IRFR1N60A
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR1N60A CAD Model

Description

The IRFR1N60A is an N-channel power MOSFET from Vishay. It's designed for high-voltage, high-speed switching applications such as power supplies, motor control, and lighting systems. This MOSFET offers a good balance of on-resistance and gate charge.

Applications

  • Power Supplies
  • Motor Control
  • Lighting Systems
  • DC-DC Converters
  • Solid-State Relays

Features

  • High Voltage Rating: Suitable for high-voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
  • Fast Switching Speed: Enables fast switching operation.
  • Avalanche Energy Rated: Withstands transient voltage spikes.
  • Surface Mount Package: Facilitates automated assembly and reduces board space.

Benefits

  • Improved Efficiency: Low on-resistance reduces power losses and increases system efficiency.
  • Enhanced Performance: High switching speed enables faster response times and improved control.
  • Increased Reliability: Avalanche energy rating protects against voltage transients.
  • Simplified Assembly: Surface mount package streamlines manufacturing processes.
  • Reduced Size: Compact surface mount package allows for denser circuit designs.

The IRFR1N60A is fabricated using advanced MOSFET technology to achieve low on-resistance and high switching speed. The device is housed in a DPAK package, allowing for efficient heat dissipation. The key specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and on-resistance (RDS(on)). Detailed specifications and application notes can be found in the official Vishay datasheet. Proper thermal management is essential to ensure reliable operation at high power levels.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,900 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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