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SUB65P04-15-E3

Part No SUB65P04-15-E3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194874-SUB65P04-15-E3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUB65P04-15-E3 CAD Model

Description

The SUB65P04-15-E3 is a P-Channel MOSFET manufactured by Vishay. Designed for switching and amplification applications, this MOSFET offers low on-resistance and fast switching speeds. The '-E3' suffix typically denotes compliance with RoHS and other environmental standards.

Applications

  • Load Switching: Used to control the flow of current to a load, such as a motor or LED array.
  • Power Management: Suitable for use in power supplies, DC-DC converters, and battery management systems.
  • Solid State Relays: Can be used as the switching element in solid-state relays.
  • High-Side Switching: P-channel MOSFETs are commonly used for high-side switching applications.

Features

  • P-Channel MOSFET: Allows for easier high-side switching compared to N-channel MOSFETs in certain applications.
  • Low On-Resistance (RDS(on)): Reduces power dissipation during switching, improving overall efficiency.
  • Fast Switching Speed: Enables efficient operation in high-frequency switching circuits.
  • Surface Mount Package: Designed for automated assembly on printed circuit boards (PCBs).
  • RoHS Compliant: Compliant with Restriction of Hazardous Substances (RoHS) directive.

Benefits

  • Improved Efficiency: Low RDS(on) minimizes power loss, resulting in higher efficiency and less heat generation.
  • Simplified Circuit Design: P-Channel configuration can simplify circuit design in certain scenarios.
  • Compact Size: Surface mount package enables smaller and denser circuit designs.
  • Reliable Operation: Robust design ensures reliable performance in demanding applications.
  • Environmentally Friendly: RoHS compliance reduces environmental impact.

Additional Details

The SUB65P04-15-E3 is typically characterized by its drain-source voltage rating (VDS), gate-source voltage rating (VGS), continuous drain current (ID), and pulsed drain current (IDM). The gate threshold voltage (VGS(th)) is the voltage required to turn the MOSFET on. The device's thermal resistance, both junction-to-ambient and junction-to-case, are important considerations for thermal management. Depending on the application's power dissipation, proper heat sinking or PCB layout techniques might be necessary to keep the MOSFET within its safe operating area. The datasheet is the primary source of information for detailed electrical characteristics and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4084 $57.9428
42+ $2.7963 $117.4446
64+ $2.7085 $173.3440
89+ $2.6219 $233.3491
114+ $2.5341 $288.8874
153+ $2.2719 $347.6007
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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