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IRFR010

Part No IRFR010
Manufacturer Vishay
Catalog FETs - Single
Description N-CHANNEL POWER MOSFET | MOSFET N-CH 50V 8.2A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 50V
Id - Continuous Drain Current 8.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 200mOhm at 4.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 10nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 250pF at 25V
Power Dissipation (Maximum) 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1187839-IRFR010
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR010 CAD Model

Description

The Vishay Siliconix IRFR010 is an N-Channel MOSFET that is packaged in a D-Pak case.

  • Channel Type: N-Channel
  • Package: D-Pak
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current: 8.2A
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 200mOhm @ 4.6A and 10V
  • Input Capacitance: 250pF @ 25V
  • Operating Temperature Range: -55°C to 150°C
  • Supply and Demand Status: Sufficient
  • Package Quantity: 75 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6070 $60.7000
235+ $0.4980 $117.0300
360+ $0.4826 $173.7360
495+ $0.4670 $231.1650
640+ $0.4514 $288.8960
860+ $0.4047 $348.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,800 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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