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Same model may have multiple batches, images only for reference.
IRFP27N60K Real Image
Same model may have multiple batches, images only for reference.

IRFP27N60K

Part No IRFP27N60K
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) | MOSFET N-CH 600V 27A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 27A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 220mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 180nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 4660pF at 25V
Power Dissipation (Maximum) 500W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187780-IRFP27N60K
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP27N60K CAD Model

Description

The Vishay Siliconix IRFP27N60K is an N-channel MOSFET transistor with a breakdown voltage of 600V and a continuous drain current of 27A.

  • Breakdown Voltage: 600V
  • Continuous Drain Current: 27A
  • Maximum Power Dissipation: 500W
  • Mounting Type: Through Hole
  • Package: TO-247-3
  • Gate Source Voltage (th): 5V @ 250μA
  • Gate Charge (Qg): 180nC @ 10V
  • Input Capacitance (Ciss): 4660pF @ 25V
  • Maximum Forward Voltage: 220mOhm @ 16A, 10V
  • Designed for: Discrete semiconductor products
  • Temperature Range: -55°C to 150°C
  • Supply and Demand Status: Balanced
  • Package: Tube
  • Manufacturer Pack Quantity: 500
  • MSL Level: 1 (Unlimited)

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