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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 23A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 140mOhm at 14A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 140nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2700pF at 25V
Power Dissipation (Maximum) 190W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187773-IRFP254
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Commercial
Ultra Librarian 3D Model Ultra Librarian IRFP254 CAD Model

Description

The IRFP254 is a MOSFET transistor designed for use in power management and commercial applications.

  • Channel Type: N-channel
  • Maximum Vds: 250V
  • Continuous Drain Current: 23A
  • Maximum Rds On @ Id, Vgs: 140mOhm @ 14A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 140nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 25V
  • Manufacturer: Vishay Siliconix
  • Package: TO-247-3
  • Power Dissipation (Maximum): 190W
  • Supply and Demand Status: Limited
  • MSL Level: 1 (Unlimited)
  • Temperature Range: -55°C ~ 150°C

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