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IRFI9Z34G

Part No IRFI9Z34G
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET POWER MOSFET | MOSFET P-CH 60V 12A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 140mOhm at 7.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1100pF at 25V
Power Dissipation (Maximum) 42W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187682-IRFI9Z34G
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI9Z34G CAD Model

Description

The Vishay Siliconix IRFI9Z34G is a P-Channel MOSFET transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 12A. It has a maximum on-resistance of 140mOhm at 7.2A and 10V gate-source voltage. The transistor has a TO-220-3 package and is mounted using through hole technology. It has a gate-source voltage threshold of 4V at 250μA and a gate charge of 34nC at 10V. The IRFI9Z34G has a maximum power dissipation of 42W and a speed of standard recovery >500ns, >200mA (Io). It is an obsolete product and has a limited supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.1819 $50.1837
56+ $1.7902 $100.2512
87+ $1.7343 $150.8841
120+ $1.6784 $201.4080
155+ $1.6224 $251.4720
207+ $1.4546 $301.1022
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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