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IRFI830G

Name: IRFI830G
Brand: Vishay
SKU: 604979
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRFI830G
Manufacturer	Vishay
Catalog	FETs - Single
Description	Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A) \| MOSFET N-CH 500V 3.1A TO220FP
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	500V
Id - Continuous Drain Current	3.1A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	1.5Ohm at 1.9A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	38nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	610pF at 25V
Power Dissipation (Maximum)	35W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-220-3
Manufacturer Package	TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity	1,000
MSL Level	1 (Unlimited)
Win Source Part Number	1187667-IRFI830G
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRFI830G CAD Model

Description

The Vishay Siliconix 1187667-IRFI830G is an N-channel MOSFET with a maximum drain-source breakdown voltage of 500V and a continuous drain current of 3.1A.

Maximum Rds On: 1.5Ohm @ 1.9A and 10V
Package: TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity: 1000
Category: Discrete Semiconductor Products
ECCN: EAR99
MSL Level: 1 (unlimited)
Input Capacitance: 610pF @ 25V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
25+	$2.3753	$59.3825
60+	$1.9489	$116.9340
92+	$1.8881	$173.7052
127+	$1.8272	$232.0544
164+	$1.7662	$289.6568
219+	$1.5835	$346.7865

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 8,300 pieces

MOQ: 6 pcs

Order Increment : 1 pcs

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