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IRF9630S

Part No IRF9630S
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) | MOSFET P-CH 200V 6.5A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 6.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 800mOhm at 3.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 29nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 700pF at 25V
Power Dissipation (Maximum) 3W, 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187457-IRF9630S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9630S CAD Model

Description

The Vishay Siliconix IRF9630S MOSFET is a P-channel transistor with a maximum drain-source breakdown voltage of 200V and a continuous drain current of 6.5A.

  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 700pF @ 25V
  • Maximum Power Dissipation: 3W or 74W
  • Gate Charge: 29nC @ 10V
  • Package: Tube
  • Quantity per Manufacturer Pack: 50
  • Suitable for: Discrete semiconductor products
  • Mounting Style: SMD

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5818 $55.3630
80+ $1.2979 $103.8320
120+ $1.2574 $150.8880
165+ $1.2168 $200.7720
215+ $1.1763 $252.9045
285+ $1.0546 $300.5610
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,600 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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