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Same model may have multiple batches, images only for reference.
IRFI640G Real Image
Same model may have multiple batches, images only for reference.

IRFI640G

Part No IRFI640G
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) | MOSFET N-CH 200V 9.8A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 9.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 180mOhm at 5.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 70nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 40W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187655-IRFI640G
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Commercial
Ultra Librarian 3D Model Ultra Librarian IRFI640G CAD Model

Description

The Vishay Siliconix IRFI640G is a N-channel MOSFET transistor designed for use in industrial, power management, and commercial applications.

  • Vds (drain-source breakdown voltage): 200V
  • Id (continuous drain current): 9.8A
  • Rds On (maximum): 180mOhm @ 5.9A and 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 70nC @ 10V
  • Input capacitance (Ciss) (Maximum) @ Vds: 1300pF @ 25V
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Power dissipation (maximum): 40W
  • Supply and demand status: balanced
  • Popularity: medium

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