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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 800mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 800mOhm at 480mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 260pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187563-IRFD220
Manufacturer Homepage www.intersil.com/cda/home
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFD220 CAD Model

Description

The IRFD220 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Package: 4-DIP, Hexdip, HVMDIP
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 800mA
  • Maximum Rds On: 800mOhm @ 480mA, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.4319 $53.1828
28+ $3.6364 $101.8192
43+ $3.5228 $151.4804
59+ $3.4091 $201.1369
76+ $3.2955 $250.4580
102+ $2.9546 $301.3692
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 35,000 pieces
MOQ: 12 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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