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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 800mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 800mOhm at 800mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 7nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 200pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187559-IRFD113
Manufacturer Homepage 0
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD113 CAD Model

Description

The IRFD113 is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

  • Popularity: Medium
  • Maximum Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 800mA
  • Applications: Power supplies, motor control, and lighting
  • Input Capacitance: Low
  • Switching Speed: Very Quickly
  • Manufacturer: Vishay Siliconix

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