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IRFD010

Part No IRFD010
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET TRANSISTORS N-CHANNEL HEXDIP | MOSFET N-CH 50V 1.7A 4-DIP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 50V
Id - Continuous Drain Current 1.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 200mOhm at 860mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 13nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 250pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187553-IRFD010
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD010 CAD Model

Description

The Vishay Siliconix 1187553-IRFD010 is an N-Channel MOSFET component with a medium popularity.

  • Popularity: Medium
  • Status: Obsolete
  • Manufacturer Homepage: www.irf.com
  • Power Dissipation: 1W
  • Maximum Vds drain-source breakdown voltage: 50V
  • Maximum gate-source voltage: ±20V
  • Maximum input capacitance: 250pF @ 25V
  • Gate-source voltage(th) (maximum) @ Id: 4V @ 250μA
  • Gate charge (Qg) (maximum) @ Vgs: 13nC @ 10V
  • Drive voltage (Max Rds On, Min Rds On): 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,100 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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