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Same model may have multiple batches, images only for reference.
IRF9610S Real Image
Same model may have multiple batches, images only for reference.

IRF9610S

Part No IRF9610S
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) | MOSFET P-CH 200V 1.8A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 1.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 900mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 170pF at 25V
Power Dissipation (Maximum) 3W, 20W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187453-IRF9610S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9610S CAD Model

Description

The Vishay Siliconix 1187453-IRF9610S is a high-quality MOSFET transistor that is designed for use in discrete semiconductor products.

  • Manufacturer: Vishay
  • Popularity: medium
  • Supply and Demand: limited
  • Power Dissipation: 3W
  • Maximum Vds - Drain-Source Breakdown Voltage: 200V
  • Input Capacitance: 170pF @ 25V
  • Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V
  • Polarity: P-Channel Transistor Polarity

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