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IRF9510

Name: IRF9510
Brand: Vishay
SKU: 604744
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRF9510
Manufacturer	Vishay
Catalog	FETs - Single
Description	3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET \| MOSFET P-CH 100V 4A TO-220AB
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Status	Obsolete
Transistor Polarity	P-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	4A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	1.2Ohm at 2.4A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	8.7nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	200pF at 25V
Power Dissipation (Maximum)	43W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Through Hole
Supplier Device Package	TO-220AB
Manufacturer Package	TO-220-3
Manufacturer Pack Quantity	1,000
MSL Level	1 (Unlimited)
Win Source Part Number	1187432-IRF9510
Manufacturer Homepage	www.intersil.com/cda/home
Popularity	Medium
Supply and Demand Status	Limited
Application Field	Used in Industrial, Power Management
Ultra Librarian 3D Model	Ultra Librarian IRF9510 CAD Model

Description

The IRF9510 is a P-channel MOSFET manufactured by Vishay Siliconix.

Supply and Demand Status: Limited (Obsolete)
Maximum Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 4A
Feature: Low on-resistance and high input capacitance.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
115+	$0.4450	$51.1750
275+	$0.3652	$100.4300
425+	$0.3538	$150.3650
585+	$0.3424	$200.3040
760+	$0.3309	$251.4840
1,015+	$0.2967	$301.1505

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 23,500 pieces

MOQ: 115 pcs

Order Increment : 1 pcs

Qty:

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Shipping Information

Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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