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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 3.3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.5Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.2nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 140pF at 25V
Power Dissipation (Maximum) 36W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187075-IRF610
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF610 CAD Model

Description

The IRF610 MOSFET is a power management component manufactured by Vishay Siliconix. It is a through-hole component that is mounted on a TO-220AB package.

  • Power Dissipation: 36W
  • Continuous Drain Current: 3.3A
  • Popularity: Low
  • Status: Obsolete
  • Vds Drain-Source Breakdown Voltage: 200V
  • Rds On Resistance: 1.5Ohm @ 2A, 10V
  • Gate Charge: 8.2nC @ 10V
  • Input Capacitance: 140pF @ 25V
  • Commonly Used In: Power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7128 $53.4600
150+ $0.6677 $100.1550
235+ $0.6452 $151.6220
335+ $0.6000 $201.0000
435+ $0.5775 $251.2125
545+ $0.5549 $302.4205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 15,000 pieces
MOQ: 75 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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