IRF634S Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 8.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 450mOhm at 5.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 41nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 770pF at 25V
Power Dissipation (Maximum) 3.1W, 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187110-IRF634S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF634S CAD Model

Description

The Vishay Siliconix MOSFET is a N-channel transistor designed for use in discrete semiconductor products.

  • Drive Voltage (Max Rds on, Min Rds on): 10V
  • Vds - Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 8.1A
  • Rds On (Maximum) @ Id, Vgs: 450mOhm @ 5.1A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 770pF @ 25V
  • Device Status: Obsolete
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.7570 $68.1300
210+ $0.6212 $130.4520
325+ $0.6018 $195.5850
445+ $0.5824 $259.1680
575+ $0.5630 $323.7250
770+ $0.5048 $388.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 9,000 pieces
MOQ: 35 pcs
Order Increment : 1 piece
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