The IRLU110APBF is a Logic Level N-Channel MOSFET from VBsemi. It is designed for low voltage, high-speed switching applications. This MOSFET features a low on-resistance (RDS(on)) and a gate threshold voltage that is compatible with logic-level drive signals, making it suitable for direct interfacing with microcontrollers and other low-voltage control circuits.

Applications

• DC-DC converters
• Load switches
• Motor control
• Solid-state relays
• Power management in portable devices

Features

• Logic-level gate drive: Enables direct interfacing with microcontrollers.
• Low on-resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
• Fast switching speed: Reduces switching losses and improves efficiency.
• Avalanche rated: Provides increased ruggedness and reliability.
• Lead-free package: Complies with environmental regulations.
• TOL251 package: Provides excellent thermal performance.

Benefits

• Increased energy efficiency: Low on-resistance and fast switching speed minimize power losses.
• Simplified circuit design: Logic-level gate drive simplifies interfacing with control circuits.
• Improved system reliability: Avalanche rating ensures robust performance under transient conditions.
• Reduced heat sink size: Lower losses translate to less heat generation.
• Environmentally friendly: Lead-free package complies with environmental regulations.

Technical Specifications

The IRLU110APBF has a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 4.4A at 25°C. The gate-source voltage (VGS) is ±16V. The on-resistance (RDS(on)) is typically 0.27 Ohms at VGS = 5V. The gate threshold voltage (VGS(th)) is typically between 1V and 2.5V, making it suitable for logic-level drive. The operating junction temperature ranges from -55°C to +175°C. The device's fast switching characteristics minimize switching losses at higher frequencies. The TOL251 package provides excellent thermal resistance, ensuring efficient heat dissipation.