The UTT50N06L-TN3-R is an N-channel Power MOSFET manufactured by Unisonic Technologies Co., Ltd. (UTC). It is designed for use in a variety of power switching applications, offering a combination of low on-resistance and fast switching speeds.

Applications

• DC-DC converters
• Power management circuits
• Motor control
• Load switching
• Synchronous rectification

Features

• Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
• High Current Capability: Designed to handle substantial current levels.
• Fast Switching Speed: Enables efficient and high-frequency operation.
• Avalanche Energy Rated: Offers robustness against transient voltage spikes.
• Lead-Free and RoHS Compliant: Meets environmental standards.

Benefits

• Improved Efficiency: Low RDS(on) significantly reduces conduction losses.
• Enhanced Thermal Performance: Efficient heat dissipation characteristics.
• Reliable Operation: Robust design ensures dependability in demanding applications.
• Environmentally Friendly: Compliant with RoHS standards.
• Compact Design: Enables space-saving applications.

Technical Specifications (Typical)

Typical specifications for the UTT50N06L-TN3-R include:

• Drain-Source Voltage (VDS): 60V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 50A (at VGS = 10V, TC = 25°C)
• On-Resistance (RDS(on)): Typically 11 mΩ (at VGS = 10V)
• Total Gate Charge (Qg): Typically 25 nC
• Operating Temperature Range: -55°C to +175°C

Always refer to the official Unisonic Technologies (UTC) datasheet for the UTT50N06L-TN3-R to ensure accurate specifications and application details. Precise values and operating conditions are crucial for correct implementation and performance.