The UT4446L-S08-R is a P-Channel enhancement mode power MOSFET from Unisonic Technologies Co., Ltd. (UTC). It is designed for load switching applications and provides a good balance between RDS(ON) and gate charge for efficient operation.

Applications:

• Load switching
• Power management in portable devices
• DC-DC converters
• Battery protection circuits

Features:

• Low RDS(ON) for reduced conduction losses.
• Low gate charge (Qg) for efficient switching.
• Logic level gate drive.
• Lead-free finish; RoHS compliant.

Benefits:

• Improved power efficiency in load switching applications.
• Reduced switching losses and faster response times.
• Direct interface with logic-level control signals simplifies circuit design.
• Environmentally friendly due to lead-free construction and RoHS compliance.

Technical Specifications:

The UT4446L-S08-R features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -4.5A. The RDS(ON) is 45 mΩ at VGS = -10V. The gate-source voltage (VGS) is ±20V. It is available in a SOP-8 package. The operating junction temperature ranges from -55°C to +150°C.