The UT3418L-AE3-R is a P-Channel enhancement-mode MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). This MOSFET is designed for power management applications requiring efficient switching and low on-resistance. Its advanced trench technology contributes to its superior performance and reliability.

Applications

• Load switching
• Power management in portable devices
• DC-DC converters
• Battery management systems
• Motor control circuits

Features

• Low on-resistance (RDS(on))
• High-speed switching
• Low gate charge
• Trench technology for enhanced efficiency
• Surface mount package

Benefits

• Improved power efficiency due to low RDS(on)
• Reduced power loss and heat dissipation
• Faster switching speeds lead to better performance in high-frequency applications
• Compact design allows for use in space-constrained applications
• Enhanced thermal performance for reliable operation

Additional Details

The UT3418L-AE3-R typically comes in a SOT-23 package. Key specifications include a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -4A. Its gate-source voltage (VGS) is typically ±20V. The low gate charge ensures efficient switching. The device is RoHS compliant. The trench technology used in its design contributes to lower on-resistance and improved switching performance, making it suitable for a wide range of power management applications. This MOSFET is specifically designed to minimize conduction losses and improve overall system efficiency.