The 7N10L-TN3-R is a power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). It is an N-channel enhancement mode MOSFET designed for various switching applications, offering low gate charge and on-resistance for efficient performance.

Applications

• DC-DC converters
• Power management systems
• Motor control
• LED lighting
• Switching power supplies

Features

• Low gate charge (Qg)
• Low drain-source on-resistance (RDS(on))
• High avalanche energy
• Fast switching speed
• Simple drive requirements
• Lead-free

Benefits

• High efficiency due to low on-resistance and gate charge
• Reduced switching losses
• Enhanced system reliability
• Suitable for high-frequency applications
• Easy to implement in various circuits
• Environmentally friendly

Specifications

The 7N10L-TN3-R typically has a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) rating dependent on the specific case temperature. The on-resistance (RDS(on)) is low, contributing to reduced power losses. The gate charge (Qg) is minimized for faster switching. Package is often TO-251 or similar. Consult the official UTC datasheet for precise electrical characteristics and thermal performance details.