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25N10L-TN3-R

Part No 25N10L-TN3-R
Manufacturer UTC
Catalog Hard To Find
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1123381-25N10L-TN3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 25N10L-TN3-R CAD Model

Description

The 25N10L-TN3-R is an N-Channel enhancement mode power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). It's designed for high-efficiency switching applications and is characterized by its low gate charge and fast switching speed.

Applications:

  • DC-DC converters: Used in voltage regulation and conversion circuits.
  • Power management in portable devices: Found in laptops, smartphones, and tablets for efficient power distribution.
  • LED lighting: Controls current in LED drivers for brightness regulation.
  • Motor control: Used in PWM motor control circuits.
  • Switching regulators: Provides efficient switching in voltage regulators.

Features:

  • N-Channel MOSFET: Offers efficient switching capabilities.
  • Low Gate Charge: Minimizes switching losses and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation.
  • Low Drain-Source On-Resistance (RDS(on)): Reduces conduction losses.
  • Logic Level Gate Drive: Can be driven directly by logic level signals.

Benefits:

  • High Efficiency: Low RDS(on) and gate charge contribute to high efficiency.
  • Reduced Power Dissipation: Minimizes heat generation, improving reliability.
  • Simplified Drive Circuitry: Logic-level gate drive simplifies interface with microcontrollers.
  • Improved Thermal Performance: Enhanced thermal characteristics allow for higher power operation.
  • Compact Design: Small package size allows for high-density layouts.

Additional Details:

The 25N10L-TN3-R typically features a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) rating of 25A. The RDS(on) value is very low, typically around 0.045 ohms at a gate-source voltage of 10V. The gate threshold voltage (VGS(th)) is usually between 1V and 3V. The device is typically packaged in a TO-252 package. This MOSFET is designed to provide efficient and reliable performance in a variety of switching applications.

Proper thermal management, including the use of heat sinks if necessary, is crucial for optimal performance and longevity. Refer to the datasheet for detailed specifications and application guidelines.

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