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TGF2960-SD

Part No TGF2960-SD
Manufacturer TriQuint Semiconductor
Catalog Electronic Wholesale
Description 0.5 Watt DC-5 GHz Packaged HFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer TriQuint Semiconductor
Win Source Part Number 1266927-TGF2960-SD
Manufacturer Homepage www.triquint.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TGF2960-SD CAD Model

Description

The TGF2960-SD is a high-performance gallium nitride (GaN) RF transistor from TriQuint Semiconductor (now Qorvo). It is designed for a wide range of applications, including radar, communications, and industrial heating.

Applications:

  • Radar systems.
  • Communication amplifiers.
  • Industrial heating equipment.
  • Test and measurement equipment.
  • Jamming applications.

Features:

  • High power output: Delivers substantial RF power for demanding applications.
  • High efficiency: Minimizes power consumption and heat generation.
  • Wide bandwidth: Operates over a broad frequency range.
  • GaN technology: Provides superior performance compared to silicon-based transistors.
  • Robust design: Withstands high voltage and current conditions.

Benefits:

  • Increased system performance: High power output and efficiency enhance overall system capabilities.
  • Reduced operating costs: Lower power consumption translates to cost savings.
  • Improved reliability: Robust design ensures stable operation in harsh environments.
  • Simplified system design: Wide bandwidth simplifies circuit design and reduces the need for multiple components.

Additional Details:

The TGF2960-SD GaN RF transistor features a high drain voltage and drain current rating, enabling it to deliver substantial RF power. The high efficiency minimizes power consumption and reduces the need for extensive cooling. The wide bandwidth allows the transistor to operate over a broad frequency range, making it suitable for various applications. The GaN technology provides superior performance compared to silicon-based transistors, including higher power density, higher efficiency, and higher operating temperature. The transistor is designed with a robust structure to withstand high voltage and current conditions, ensuring reliable operation in demanding applications. The TGF2960-SD operates within a specified temperature range, ensuring stable performance in diverse operating conditions. This GaN RF transistor is ideal for applications requiring high power, high efficiency, and wide bandwidth.

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