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TPN2R203NC,L1Q

Name: TPN2R203NC,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: 801907
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	TPN2R203NC,L1Q
Manufacturer	Toshiba Semiconductor and Storage
Catalog	FETs - Single
Description	MOSFET N-CH 30V 45A 8-TSON
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) at 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	2.2mOhm at 22.5A, 10V
Vgs(th) (Maximum) at Id	2.3V at 500μA
Gate Charge (Qg) (Maximum) at Vgs	34nC at 10V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	2230pF at 15V
Power Dissipation (Maximum)	700mW , 42W (Tc)
Temperature Range - Operating	150°C
Mounting Style	SMD
Supplier Device Package	8-TSON Advance (3.3x3.3)
Manufacturer Package	8-PowerVDFN
Manufacturer Pack Quantity	5,000
MSL Level	1 (Unlimited)
Popularity	High
Supply and Demand Status	Balance
Win Source Part Number	801907-TPN2R203NC,L1Q
Ultra Librarian 3D Model	Ultra Librarian TPN2R203NC,L1Q CAD Model

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Description

The TPN2R203NC,L1Q is an N-Channel MOSFET (Metal Oxide) integrated circuit (IC) manufactured by Toshiba Semiconductor and Storage.

Package: 8-PowerVDFN
Manufacturer Pack Quantity: 5,000
Mounting Style: SMD
Drain to Source Voltage (Vdss): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Dissipation (Maximum): 700mW
Temperature Range - Operating: 150°C
MSL Level: 1 (Unlimited)
Input Capacitance (Ciss) (Maximum) @ Vds: 2230pF @ 15V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
16+	$3.6983	$59.1728
39+	$3.0342	$118.3338
59+	$2.9395	$173.4305
82+	$2.8448	$233.2736
105+	$2.7501	$288.7605
141+	$2.4659	$347.6919

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 17,271 pieces

MOQ: 16 pcs

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TPN2R203NC,L1Q

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