The TPCP8402 TE85L,F,M is a P-channel MOSFET from Toshiba Semiconductor and Storage, designed for use in power management applications. It offers efficient switching capabilities and is well-suited for use in load switching, DC-DC converters, and other power control circuits. The MOSFET is characterized by its low on-resistance, which helps to minimize power loss and improve overall system efficiency.

Applications

• Load switching
• DC-DC converters
• Power management in portable devices
• Battery protection circuits

Features

• P-channel MOSFET
• Low drain-source on-resistance (RDS(on))
• Fast switching speed
• Surface-mount package (TE85L)
• Lead-free

Benefits

• Improved power efficiency
• Reduced heat generation
• Suitable for high-frequency applications
• Compact design for space-constrained environments
• Environmentally friendly due to lead-free construction

Technical Specifications

The TPCP8402 TE85L,F,M features a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating of -4A. The RDS(on) is typically 45 mΩ at VGS = -10V and 70 mΩ at VGS = -4.5V. The gate-source threshold voltage (VGS(th)) ranges from -1.0V to -3.0V. It is available in a TE85L surface-mount package and is RoHS compliant, ensuring that it meets environmental safety standards.

In conclusion, the TPCP8402 TE85L,F,M is a reliable and efficient P-channel MOSFET suitable for a variety of power management applications. Its low on-resistance and fast switching capabilities make it a good choice for designs where power efficiency and small size are important.