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Same model may have multiple batches, images only for reference.
TPCC8104,L1Q(CM
Same model may have multiple batches, images only for reference.

TPCC8104,L1Q(CM

Part No TPCC8104,L1Q(CM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 20A 8TSON  /  P-Channel 30 V 20A (Ta) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds 2260 pF @ 10 V
Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN
Base Product Number TPCC8104
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 264-TPCC8104L1Q(CMTR
Standard Package 5,000
Win Source Part Number 974920-TPCC8104,L1Q(CM
Ultra Librarian 3D Model Ultra Librarian TPCC8104,L1Q(CM CAD Model

Description

The TPCC8104,L1Q(CM) from Toshiba Semiconductor and Storage is a P-Channel MOSFET transistor.

  • Type: P-Channel MOSFET
  • Drain to Source Voltage: 30 V (Max)
  • Continuous Drain Current: 20 A (Max)
  • Reference Case: 8-PowerVDFN
  • Package: Tape & Reel (TR)
  • Supply and Demand: Unlimited

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