The TPCA8068-H is a sophisticated N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. This device is optimized for high-efficiency power management applications, featuring a low drain-source on-resistance (RDS(ON)) to minimize power losses during switching. The MOSFET is fabricated using advanced trench gate technology, enhancing its switching speed and overall performance.

Applications

• DC-DC converters
• Load switching applications
• Power management circuits in portable devices
• Motor control systems
• LED lighting drivers

Features

• Low drain-source on-resistance (RDS(ON)) for reduced power dissipation
• High-speed switching capability for efficient operation
• Advanced trench gate structure for improved performance
• Optimized for 4.5V gate drive
• Small surface-mount package for space-saving designs
• Pb-free and RoHS compliant

Benefits

• Improved energy efficiency in power conversion applications
• Reduced heat generation, enhancing system reliability
• Compact solution for space-constrained environments
• Simplified thermal management due to low RDS(ON)
• Complies with environmental regulations

Additional Details

The TPCA8068-H typically features a drain-source voltage (VDSS) rating of 30V and a continuous drain current (ID) rating of up to 9A, depending on application-specific conditions and thermal management. The gate-source voltage (VGSS) is typically rated at ±20V. The RDS(ON) is usually specified at 14 mΩ at VGS = 10V and 23 mΩ at VGS = 4.5V. It is available in an SOP-8 package. The operating and storage temperature ranges are typically between -55°C and 150°C. These specifications make the TPCA8068-H well-suited for use in battery-powered devices and other applications where efficiency and size are critical. Its robust design ensures reliable operation in demanding conditions.