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TPC8045-H

Part No TPC8045-H
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH 40V 18A 8-SOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) @ Vgs 90nC @ 10V
Input Capacitance (Ciss) @ Vds 7540pF @ 10V
Operating Temperature Range 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.173", 4.40mm Width)
Manufacturer Device Package 8-SOP (5.5x6.0)
Win Source Part Number 110770-TPC8045-H
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPC8045-H CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET N-Channel, Metal Oxide FET is a high-performance transistor designed for use in discrete semiconductor products.

  • Type: MOSFET N-Channel, Metal Oxide FET
  • Design: Standard
  • Maximum Drain-Source Voltage: 40V
  • Continuous Drain Current: 18A @ 25°C
  • Low On-State Resistance: 3.9 mOhm @ 9A and 10V
  • Gate Charge: 90nC @ 10V
  • Input Capacitance: 7540pF @ 10V
  • Package: 8-SOIC (0.173", 4.40mm Width)
  • Manufacturer Device Package: 8-SOP (5.5x6.0)

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.6115 $60.0645
54+ $2.1437 $115.7598
84+ $2.0767 $174.4428
115+ $2.0097 $231.1155
149+ $1.9427 $289.4623
199+ $1.7417 $346.5983
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Availability: 1,418 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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