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TPC6003

Part No TPC6003
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 219702-TPC6003
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC6003 CAD Model

Description

The TPC6003 is an N-channel MOS field-effect transistor from Toshiba Semiconductor and Storage, primarily designed for power management applications where efficient switching and low on-resistance are essential.

Applications:

  • Power Supplies
  • DC-DC Converters
  • Load Switching
  • Motor Control
  • Portable Devices

Features:

  • N-Channel MOSFET: Enables efficient and fast switching in power applications.
  • Low On-Resistance (RDS(on)): Minimizes power loss and reduces heat generation during operation.
  • Low Gate Charge (Qg): Allows for faster switching speeds and minimizes gate drive requirements.
  • Avalanche Capability: Provides robustness against voltage spikes and transient events.
  • Surface Mount Package: Designed for compact layouts and automated assembly processes.

Benefits:

  • Improved Power Efficiency: Low RDS(on) reduces power dissipation, resulting in higher efficiency in power systems.
  • Reduced Heat Generation: Lower on-resistance translates to less heat being produced, which enhances reliability and extends the life of the device and surrounding components.
  • Faster Switching: Low gate charge contributes to faster switching performance, suitable for high-frequency DC-DC converters.
  • Enhanced System Reliability: Avalanche capability protects against potentially damaging voltage transients, increasing overall system robustness.
  • Compact Design: Surface mount packaging enables smaller, more densely packed circuit designs.

Additional Details:

The TPC6003 typically comes in a small surface-mount package, often a SOP-8 or similar. Key electrical specifications to consider include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), pulsed drain current (IDP), and total power dissipation (PD). The specific values for these parameters are crucial for proper application and should be verified in the device datasheet. The gate threshold voltage (Vth) is also an important parameter for designing appropriate gate drive circuitry.

Proper thermal management, such as heat sinking or forced air cooling, might be necessary when the TPC6003 is used in applications with high power dissipation. Always operate the device within its specified voltage, current, and temperature ratings to ensure optimal performance and long-term reliability. Consult the manufacturer's datasheet for detailed specifications, application notes, and recommended operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0300 $61.8000
140+ $0.8452 $118.3280
215+ $0.8187 $176.0205
295+ $0.7923 $233.7285
380+ $0.7659 $291.0420
505+ $0.6867 $346.7835
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 72,200 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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