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TLP785F(D4GBT7F)

Part No TLP785F(D4GBT7F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Optoisolators - Transistor, Photovoltaic Output
Description Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP
Datasheet
Sample
Rohs State rohs
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Category Isolators
Family Optoisolators - Transistor, Photovoltaic Output
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
Number of Channels 1
Voltage - Isolation 5000Vrms
Current Transfer Ratio (Min) 50% @ 5mA
Current Transfer Ratio (Max) 600% @ 5mA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Rise / Fall Time (Typ) 2μs, 3μs
Input Type DC
Output Type Transistor
Voltage - Output (Max) 80V
Current - Output / Channel 50mA
Voltage - Forward (Vf) (Typ) 1.15V
Current - DC Forward (If) (Max) 60mA
Vce Saturation (Max) 400mV
Operating Temperature Range -55°C ~ 110°C
Mounting Style Through Hole
Package 4-DIP (0.300", 7.62mm)
Manufacturer Device Package 4-DIP
Win Source Part Number 218365-TLP785F(D4GBT7F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TLP785F(D4GBT7F) CAD Model

Description

The Toshiba Semiconductor and Storage TLP785F(D4GBT7F) is an optoisolator transistor with a photovoltaic output.

  • Maximum DC Forward Current: 60mA
  • Forward Voltage: 1.15V
  • Rise Time: 2μs
  • Fall Time: 3μs
  • Maximum Saturation Voltage: 400mV
  • Current Transfer Ratio: 50% @ 5mA
  • Maximum Current Transfer Ratio: 600% @ 5mA
  • Maximum Output Voltage: 80V
  • Isolation Voltage: 5000Vrms
  • Package: 4-DIP
  • Mounting: Through-hole

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