The TLN105B is a Gallium Arsenide (GaAs) Infrared Light Emitting Diode (IRED) manufactured by Toshiba Semiconductor and Storage. It is designed for various remote control and optical sensing applications requiring high efficiency and reliable performance.

Applications:

• Remote control systems
• Optical switches
• Light curtains
• Encoders
• Optical data transmission

Features:

• High radiant intensity
• Narrow beam angle
• Fast response time
• Low forward voltage
• Compact package

Benefits:

• Extended operating range in remote control applications
• Improved signal-to-noise ratio in optical sensing
• High-speed data transmission capabilities
• Low power consumption
• Easy integration into space-constrained designs

Additional Details:

The TLN105B emits infrared light at a peak wavelength of 950 nm. The typical forward voltage is 1.3 V at a forward current of 20 mA. The radiant intensity is typically 7 mW/sr. The half-value angle is ±20 degrees. It is housed in a compact mold package for easy mounting. This IRED offers excellent performance characteristics for a variety of optical control and sensing applications. Its GaAs construction ensures high efficiency and reliability.