The TK20E60W is a 600V, 20A N-channel power MOSFET from Toshiba Semiconductor and Storage. It utilizes the DTMOSIV (Deep Trench MOSFET) technology, contributing to its low on-resistance and fast switching speed. This MOSFET is designed for high-efficiency power conversion applications.

Applications:

• Power supplies (SMPS)
• Motor control circuits
• Lighting ballasts
• DC-DC converters
• Inverters

Features:

• VDSS: 600V
• ID: 20A
• RDS(on) (Max): 0.22 ohm @ VGS = 10V
• Gate Threshold Voltage (VGS(th)): 2.0V to 4.0V
• Low on-resistance (RDS(on))
• Fast switching speed
• Improved avalanche capability
• Easy to use and parallel

Benefits:

• Enables higher efficiency power conversion
• Reduces power losses and heat generation
• Simplifies circuit design
• Improves system reliability
• Cost-effective solution for power management

Additional Details:

The TK20E60W is available in a TO-247 package. Its low on-resistance minimizes conduction losses, and its fast switching speed reduces switching losses, both of which contribute to higher overall efficiency. The device's improved avalanche capability enhances its robustness and reliability in demanding applications. The DTMOSIV technology ensures stable operation even at high temperatures. This MOSFET is designed to be easily paralleled, allowing for higher current handling capabilities in applications requiring more power.

The gate charge (Qg) is specified to help designers optimize gate drive circuitry. The device is RoHS compliant, meaning it meets environmental standards for hazardous substance reduction. The absolute maximum ratings should be observed to prevent damage to the device. Proper heatsinking is recommended to maintain the device's operating temperature within its specified limits.