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TK10A60W,S4VX

Part No TK10A60W,S4VX
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH 600V 9.7A TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 9.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 380mOhm at 4.9A, 10V
Vgs(th) (Maximum) at Id 3.7V at 500μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 700pF at 300V
FET Feature Super Junction
Power Dissipation (Maximum) 30W (Tc)
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220SIS
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812926-TK10A60W,S4VX
Ultra Librarian 3D Model Ultra Librarian TK10A60W,S4VX CAD Model

Description

The Toshiba Semiconductor and Storage TK10A60W,S4VX is a MOSFET from Toshiba Semiconductor and Storage.

  • Type: N-Channel
  • Features: Super Junction
  • Drain-to-Source Voltage (Vdss): 600V
  • Mounting: Through-Hole
  • Supplier Device Package: TO-220SIS
  • Power Dissipation: 30W (Tc)
  • Operating Temperature Range: 150°C
  • Maximum Vgs: ±30V
  • Gate Charge (Qg): 20nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7510 $52.5300
70+ $1.4368 $100.5760
110+ $1.3919 $153.1090
150+ $1.3470 $202.0500
195+ $1.3021 $253.9095
260+ $1.1674 $303.5240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,870 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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