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TC59SM716AFTL-80

Part No TC59SM716AFTL-80
Manufacturer Toshiba Semiconductor and Storage
Catalog SD
Description SD 8Mx16-80 PC100 CL2
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Categories Memory
Win Source Part Number 945350-TC59SM716AFTL-80
Series *
Ultra Librarian 3D Model Ultra Librarian TC59SM716AFTL-80 CAD Model

Description

The TC59SM716AFTL-80 is a NAND Flash memory device manufactured by Toshiba Semiconductor and Storage. This type of memory is non-volatile, meaning it retains data even when power is removed. It is commonly used for mass storage in a variety of applications due to its high density and relatively low cost.

Applications:

  • Solid State Drives (SSDs)
  • USB Flash Drives
  • Memory Cards (SD Cards, microSD Cards)
  • Embedded Systems
  • Mobile Phones

Features:

  • Capacity: 256 Mbit (32M x 8 bit)
  • Organization: Serial Interface NAND Flash
  • Page Size: 512 bytes + 16 bytes spare
  • Block Size: 16K bytes (32 pages + 1024 bytes spare)
  • Interface: Standard NAND Flash Interface
  • Supply Voltage: 3.3V
  • Endurance: 100,000 Program/Erase Cycles
  • Operating Temperature: -40°C to 85°C

Benefits:

  • Non-Volatile Storage: Retains data even without power.
  • High Density: Provides a large storage capacity in a small physical space.
  • Solid State: No moving parts, resulting in high reliability and ruggedness.
  • Fast Access Times: Offers quick read and write speeds compared to traditional hard drives.
  • Low Power Consumption: Consumes less power, making it suitable for portable devices.

Additional Details:

The TC59SM716AFTL-80 uses a standard NAND flash interface, meaning that it requires a flash memory controller to manage the read, write, and erase operations. The '80' likely refers to the access time or speed grade of the device. It is organized into pages and blocks, with each page containing 512 bytes of data and 16 bytes of spare area for error correction codes (ECC) and other metadata. Erasing operations are performed on entire blocks, while programming (writing) operations are performed on pages. The endurance rating of 100,000 program/erase cycles indicates the number of times a block can be erased and rewritten before its reliability degrades. Error correction is essential for NAND flash memory due to the potential for bit errors during read operations. This device typically uses BCH or Reed-Solomon ECC algorithms. The wide operating temperature range makes it suitable for various environmental conditions. It's important to consult the datasheet for specific timing parameters, voltage requirements, and other critical information for proper integration into a system.

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