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TC58NVG2S5HBAI6

Part No TC58NVG2S5HBAI6
Manufacturer Toshiba Semiconductor and Storage
Catalog Hard To Find
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1626+
Reference case FBGA
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 712446-TC58NVG2S5HBAI6
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TC58NVG2S5HBAI6 CAD Model

Description

The TC58NVG2S5HBAI6 is a NAND flash memory component manufactured by Toshiba Semiconductor and Storage. It is a type of non-volatile memory widely used in various storage applications due to its high density, low power consumption, and relatively fast read/write speeds. This particular part number signifies a specific configuration and capacity within Toshiba's NAND flash memory product line.

Applications

  • Solid-state drives (SSDs) for laptops, desktops, and servers.
  • USB flash drives and memory cards (SD, microSD).
  • Embedded systems requiring non-volatile storage.
  • Mobile devices such as smartphones and tablets.
  • Digital cameras and camcorders.

Features

  • NAND flash technology for non-volatile data storage.
  • High storage density for compact designs.
  • Low power consumption, suitable for portable devices.
  • Fast read and write speeds for efficient data access.
  • Small form factor for integration into various devices.

Benefits

  • Increased storage capacity in a small footprint.
  • Improved system performance due to fast data access.
  • Extended battery life in portable devices due to low power consumption.
  • Enhanced reliability compared to traditional hard drives.
  • Robust data storage with resistance to shock and vibration.

Additional Details

This specific variant, TC58NVG2S5HBAI6, likely refers to a 2-bit-per-cell (MLC) or 3-bit-per-cell (TLC) NAND flash memory. The exact capacity and interface specifications would require consulting the official Toshiba datasheet for this part number. NAND flash memory stores data in cells, and the number of bits per cell influences the density and performance characteristics of the memory.

NAND flash memory operates by electrically programming and erasing cells to store data. Wear leveling techniques are often employed to distribute write and erase cycles evenly across the memory array, extending the lifespan of the flash memory. Error correction codes (ECC) are also integrated to detect and correct errors that may occur during data storage and retrieval, ensuring data integrity.

Due to its versatility and performance characteristics, the TC58NVG2S5HBAI6 is a valuable component in numerous electronic devices requiring reliable and efficient non-volatile storage.

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Quantity Unit Price Ext. Price
19+ $3.1721 $60.2699
45+ $2.6028 $117.1260
69+ $2.5215 $173.9835
95+ $2.4402 $231.8190
123+ $2.3587 $290.1201
164+ $2.1148 $346.8272
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