The SSM6L09FU is a dual N-channel MOSFET from Toshiba Semiconductor and Storage. This device is designed for low-voltage switching applications and load switching, featuring a low on-resistance and small package size. It is ideal for portable devices and other space-constrained applications.

Applications:

• Load Switching
• Power Management
• Portable Devices
• DC-DC Conversion

Features:

• Dual N-Channel MOSFET
• Low On-Resistance: RDS(on) = 25 mΩ (typical) at VGS = 4.5 V
• Low Threshold Voltage: Vth = 0.8 V (typical)
• Small Package: SOT-963

Benefits:

• Efficient Switching: Low on-resistance minimizes conduction losses.
• Low Voltage Operation: Operates efficiently at low gate voltages.
• Compact Design: SOT-963 package allows for high-density board layouts.

Specifications:

The SSM6L09FU has a drain-source voltage (VDS) of 20V, and a gate-source voltage (VGS) of ±8V. The continuous drain current (ID) is 2A. The on-resistance (RDS(on)) is typically 25 mΩ at VGS = 4.5 V. It is packaged in a SOT-963 package.